Vacancy-induced magnetism in ZnO thin films and nanowires

Qian Wang, Qiang Sun, Gang Chen, Yoshiyuki Kawazoe, and Puru Jena
Phys. Rev. B 77, 205411 – Published 9 May 2008

Abstract

Extensive calculations based on density functional theory have been carried out to understand the origin of magnetism in undoped ZnO thin films as found in recent experiments. The observed magnetism is confirmed to be due to Zn, instead of O, vacancy. The main source of the magnetic moment, however, arises from the unpaired 2p electrons at O sites surrounding the Zn vacancy with each nearest-neighbor O atom carrying a magnetic moment ranging from 0.490to0.740μB. Moreover, the study of vacancy-vacancy interactions indicates that in the ground state, the magnetic moments induced by Zn vacancies prefer to ferromagnetically couple with the antiferromagnetic state lying 44meV higher in energy. Since this is larger than the thermal energy at room temperature, the ferromagnetic state can be stable against thermal fluctuations. Calculations and discussions are also extended to ZnO nanowires that have larger surface to volume ratio. Here, the Zn vacancies are found to lead to the ferromagnetic state too. The present theoretical study not only demonstrates that ZnO samples can be magnetic even without transition-metal doping but also suggests that introducing Zn vacancy is a natural and an effective way to fabricate magnetic ZnO nanostructures. In addition, vacancy mediated magnetic ZnO nanostructures may have certain advantages over transition-metal doped systems in biomedical applications.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 5 January 2008

DOI:https://doi.org/10.1103/PhysRevB.77.205411

©2008 American Physical Society

Authors & Affiliations

Qian Wang1,2, Qiang Sun3,4,2,*, Gang Chen2, Yoshiyuki Kawazoe5, and Puru Jena2

  • 1School of Physical Science and Technology, Southwest University, Chongqing 40071, People’s Republic of China
  • 2Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284, USA
  • 3Department of Advanced Materials and Nanotechnology, Peking University, Beijing, People’s Republic of China
  • 4Center for Applied Physics and Technology, Peking University, Beijing, People’s Republic of China
  • 5Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

  • *sunq@coe.pku.edu.cn

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 77, Iss. 20 — 15 May 2008

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×