Ni spin switching induced by magnetic frustration in FeMn/Ni/Cu(001)

J. Wu, J. Choi, A. Scholl, A. Doran, E. Arenholz, Chanyong Hwang, and Z. Q. Qiu
Phys. Rev. B 79, 212411 – Published 25 June 2009

Abstract

FeMn/Ni/Cu(001) bilayer films are grown epitaxially and investigated by photoemission electron microscopy and magneto-optic Kerr effect. We find that as the FeMn overlayer changes from paramagnetic to antiferromagnetic state, it switches the ferromagnetic Ni spin direction from the out-of-plane to an in-plane direction of the film. This phenomenon reveals the mechanism of creating magnetic anisotropy by the out-of-plane spin frustration at the FeMn-Ni interface.

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  • Received 27 March 2009

DOI:https://doi.org/10.1103/PhysRevB.79.212411

©2009 American Physical Society

Authors & Affiliations

J. Wu1, J. Choi1, A. Scholl2, A. Doran2, E. Arenholz2, Chanyong Hwang3, and Z. Q. Qiu1

  • 1Department of Physics, University of California–Berkeley, Berkeley, California 94720, USA
  • 2Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 3Division of Advanced Technology, Korea Research Institute of Standards and Science, 209 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340, Korea

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Vol. 79, Iss. 21 — 1 June 2009

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