Effects of Resonance Bonding on the Properties of Crystalline and Amorphous Semiconductors

G. Lucovsky and R. M. White
Phys. Rev. B 8, 660 – Published 15 July 1973
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Abstract

The resonance aspect of chemical bonding is extended to solids with particular emphasis on its consequences for structural and vibrational properties. It is shown, for example, that the square of the infrared effective charge is proportional to the high-frequency dielectric constant in resonance-bonded systems. The IV-VI compounds and the group-VI elements are shown to exhibit the features of such resonance bonding. The dependence of resonance bonding on long-range order is discussed with respect to differences in the properties of the amorphous and crystalline phases of these materials.

  • Received 30 November 1972

DOI:https://doi.org/10.1103/PhysRevB.8.660

©1973 American Physical Society

Authors & Affiliations

G. Lucovsky and R. M. White

  • Xerox Palo Alto Research Center, Palo Alto, California 94304

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Issue

Vol. 8, Iss. 2 — 15 July 1973

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