Random local strain effects in homovalent-substituted relaxor ferroelectrics: A first-principles study of BaTi0.74Zr0.26O3

C. Laulhé, A. Pasturel, F. Hippert, and J. Kreisel
Phys. Rev. B 82, 132102 – Published 13 October 2010

Abstract

We present first-principles supercell calculations on BaTi0.74Zr0.26O3, a prototype material for relaxors with a homovalent substitution. From a statistical analysis of relaxed structures, we give evidence for four types of Ti-atom polar displacements: along the 111, 110, or 100 directions of the cubic unit cell or almost canceled. The type of a Ti displacement is entirely determined by the Ti/Zr distribution in the adjacent unit cells. The underlying mechanism involves local strain effects that ensue from the difference in size between the Ti4+ and Zr4+ cations. These results shed light on the structural mechanisms that lead to disordered Ti displacements in BaTi1xZrxO3 relaxors, and probably in other BaTiO3-based relaxors with homovalent substitution.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 7 June 2010

DOI:https://doi.org/10.1103/PhysRevB.82.132102

©2010 American Physical Society

Authors & Affiliations

C. Laulhé1,2, A. Pasturel3, F. Hippert1, and J. Kreisel1

  • 1Laboratoire des Matériaux et du Génie Physique, MINATEC-CNRS-Grenoble INP, 3 parvis Louis Néel, BP 257, F-38016 Grenoble Cedex 01, France
  • 2Synchrotron SOLEIL, L’Orme des Merisiers, Saint Aubin BP 48, F-91192 Gif-sur-Yvette Cedex, France
  • 3Laboratoire Science et Ingénierie des MAtériaux et Procédés, 1130 rue de la Piscine, BP 75, F-38402 Saint Martin d’Hères Cedex, France

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 82, Iss. 13 — 1 October 2010

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×