Effects of lower symmetry and dimensionality on Raman spectra in two-dimensional WSe2

Xin Luo, Yanyuan Zhao, Jun Zhang, Minglin Toh, Christian Kloc, Qihua Xiong, and Su Ying Quek
Phys. Rev. B 88, 195313 – Published 27 November 2013
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Abstract

We report the observation and interpretation of new Raman peaks in few-layer tungsten diselenide (WSe2), induced by the reduction of symmetry going from three-dimensional (3D) to two-dimensional (2D). In general, Raman frequencies in 2D materials follow quite closely the frequencies of corresponding eigenmodes in the bulk. However, while the modes that are Raman active in the bulk are also Raman active in the thin films, the reverse is not always true due to the reduced symmetry in thin films. Here, we predict from group theory and density functional calculations that two intralayer vibrational modes, which are Raman inactive in bulk WSe2 in our experimental configuration become Raman active in thin film WSe2, due to reduced symmetry in thin films. This phenomenon explains the Raman peaks we observe experimentally at ∼310 and 176 cm1 in thin film WSe2. Interestingly, the bulk B2g1 mode at ∼310 cm1 that is Raman inactive can, in fact, be detected in Raman measurements under specific wavelengths of irradiation, suggesting that in this case, crystal symmetry selection rules may be broken due to resonant scattering. Both theory and experiment indicate that the E2g1 and B2g1 modes blueshift with decreasing thickness, which we attribute to surface effects. Our results shed light on a general understanding of the Raman/infrared activities of the phonon modes in layered transition metal dichalcogenide materials and their evolution behavior from 3D to 2D.

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  • Received 29 July 2013

DOI:https://doi.org/10.1103/PhysRevB.88.195313

©2013 American Physical Society

Authors & Affiliations

Xin Luo1,*, Yanyuan Zhao2,*, Jun Zhang2, Minglin Toh4, Christian Kloc4, Qihua Xiong2,3,†, and Su Ying Quek1,†,‡

  • 1Institute of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632
  • 2Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
  • 3Division of Microelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798
  • 4School of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798

  • *These authors contributed equally.
  • Author to whom correspondence should be addressed: phyqsy@nus.edu.sg (theory); qihua@ntu.edu.sg (experiment)
  • Present address: Department of Physics, Graphene Research Centre and Centre for Computational Science and Engineering, National University of Singapore, 2 Science Drive 3, Singapore 117551.

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Issue

Vol. 88, Iss. 19 — 15 November 2013

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