Electro-optic behavior and dielectric constants of ZnGeP2 and CuGaS2

E. H. Turner, E. Buehler, and H. Kasper
Phys. Rev. B 9, 558 – Published 15 January 1974
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Abstract

The constant-strain electro-optic coefficients and dielectric constants of two ternary semiconductors (CuGaS2 and ZnGeP2) with the chalcopyrite structure have been measured. The magnitudes of the coefficients are similar to those of the binary analogs (ZnS and GaP). However, the signs of the CuGaS2 coefficients appear to be positive whereas the ZnS coefficient is negative. The ZnGeP2 coefficients are found to have opposite signs to each other.

  • Received 16 July 1973

DOI:https://doi.org/10.1103/PhysRevB.9.558

©1974 American Physical Society

Authors & Affiliations

E. H. Turner

  • Bell Laboratories, Holmdel, New Jersey 07733

E. Buehler and H. Kasper

  • Bell Laboratories, Murray Hill, New Jersey 07974

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Vol. 9, Iss. 2 — 15 January 1974

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