Optical Nonlinearities due to Mobile Carriers in Semiconductors

C. K. N. Patel, R. E. Slusher, and P. A. Fleury
Phys. Rev. Lett. 17, 1011 – Published 7 November 1966
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Abstract

Optical nonlinearities due to conduction-band electrons have been observed in InAs, InSb, GaAs, and PbTe using 10.6-μ (ω1) and 9.6-μ (ω2) radiation from a Q-switched CO2 laser. Difference frequencies ω3=2ω1ω2 at 11.8 μ and ω4=2ω2ω1 at 8.7 μ were measured for a variety of carrier concentrations at several temperatures.

  • Received 4 October 1966

DOI:https://doi.org/10.1103/PhysRevLett.17.1011

©1966 American Physical Society

Authors & Affiliations

C. K. N. Patel, R. E. Slusher, and P. A. Fleury

  • Bell Telephone Laboratories, Murray Hill, New Jersey

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Issue

Vol. 17, Iss. 19 — 7 November 1966

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