Electron-Energy-Loss Scattering near a Single Misfit Dislocation at the GaAs/GaInAs Interface

P. E. Batson; K. L. Kavanagh; J. M. Woodall; J. W. Mayer

doi:10.1103/PhysRevLett.57.2729

Electron-Energy-Loss Scattering near a Single Misfit Dislocation at the GaAs/GaInAs Interface

P. E. Batson, K. L. Kavanagh, J. M. Woodall, and J. W. Mayer

Phys. Rev. Lett. 57, 2729 – Published 24 November 1986

Abstract

Spatially resolved electron-energy-loss scattering has been used to study changes in the inelastic scattering near the bulk band-gap energy for locations near the GaAs- ${Ga}_{0.85}$ ${In}_{0.15}$ As interface. We observe the expected bulk band gap on either side of the interface. At a single interface-misfit dislocation we observe scattering which is consistent with an excitation of transitions between a localized state near the dislocation and the crystal conduction band. Within this interpretation, the energy of the state is estimated to be 0.7 ± 0.05 eV above the GaAs valence-band maximum.

Received 5 February 1986

DOI:https://doi.org/10.1103/PhysRevLett.57.2729

Authors & Affiliations

P. E. Batson¹, K. L. Kavanagh², J. M. Woodall¹, and J. W. Mayer²

¹IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
²Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853