Ferromagnetism in Magnetically Doped III-V Semiconductors

V. I. Litvinov; V. K. Dugaev

doi:10.1103/PhysRevLett.86.5593

Ferromagnetism in Magnetically Doped III-V Semiconductors

V. I. Litvinov and V. K. Dugaev

Phys. Rev. Lett. 86, 5593 – Published 11 June 2001

Abstract

The origin of ferromagnetism in semimagnetic III-V materials is discussed. The indirect exchange interaction caused by virtual electron excitations from magnetic impurity acceptor levels to the valence band can explain ferromagnetism in GaAs(Mn) in both degenerate and nondegenerate samples. Formation of ferromagnetic clusters and the percolation picture of phase transition describes well all available experimental data and allows us to predict the Mn-composition dependence of transition temperature in wurtzite $(Ga, In, Al) N$ epitaxial layers.

Received 5 January 2001

DOI:https://doi.org/10.1103/PhysRevLett.86.5593

Authors & Affiliations

V. I. Litvinov¹ and V. K. Dugaev^2,3

¹WaveBand Corporation, 375 Van Ness Avenue, Suite 1105, Torrance, California 90501
²Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany
³Institute for Materials Science Problems, Ukrainian Academy of Sciences, Vilde 5, 58001 Chernovtsy, Ukraine