CaB6: A New Semiconducting Material for Spin Electronics

H. J. Tromp, P. van Gelderen, P. J. Kelly, G. Brocks, and P. A. Bobbert
Phys. Rev. Lett. 87, 016401 – Published 18 June 2001
PDFExport Citation

Abstract

Ferromagnetism was recently observed at unexpectedly high temperatures in La-doped CaB6. The starting point of all theoretical proposals to explain this observation is a semimetallic electronic structure calculated for CaB6 within the local density approximation. Here we report the results of parameter-free quasiparticle calculations of the single-particle excitation spectrum which show that CaB6 is not a semimetal but a semiconductor with a band gap of 0.8±0.1eV. Magnetism in LaxCa1xB6 occurs just on the metallic side of a Mott transition in the La-induced impurity band.

  • Received 19 October 2000

DOI:https://doi.org/10.1103/PhysRevLett.87.016401

©2001 American Physical Society

Authors & Affiliations

H. J. Tromp1, P. van Gelderen1,2, P. J. Kelly1, G. Brocks1, and P. A. Bobbert3

  • 1Faculty of Applied Physics and MESA+ Research Institute, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
  • 2Faculty of Sciences and Research Institute for Materials, University of Nijmegen, P.O. Box 9010, 6525 ED Nijmegen, The Netherlands
  • 3Department of Applied Physics and COBRA Research School, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands

References (Subscription Required)

Click to Expand
Issue

Vol. 87, Iss. 1 — 2 July 2001

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×