Reaction of the Oxygen Molecule at the Si(100)SiO2 Interface During Silicon Oxidation

Angelo Bongiorno and Alfredo Pasquarello
Phys. Rev. Lett. 93, 086102 – Published 16 August 2004

Abstract

Using constrained ab initio molecular dynamics, we investigate the reaction of the O2 molecule at the Si(100)SiO2 interface during Si oxidation. The reaction proceeds sequentially through the incorporation of the O2 molecule in a Si-Si bond and the dissociation of the resulting network O2 species. The oxidation reaction occurs nearly spontaneously and is exothermic, irrespective of the O2 spin state or of the amount of excess negative charge available at the interface. The reaction evolves through the generation of network coordination defects associated with charge transfers. Our investigation suggests that the Si oxidation process is fully governed by diffusion.

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  • Received 5 March 2004

DOI:https://doi.org/10.1103/PhysRevLett.93.086102

©2004 American Physical Society

Authors & Affiliations

Angelo Bongiorno* and Alfredo Pasquarello

  • Institut de Théorie des Phénomènes Physiques (ITP), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
  • Institut Romand de Recherche Numérique en Physique des Matériaux (IRRMA), CH-1015 Lausanne, Switzerland

  • *Present address: GA Institute of Technology, School of Physics, 837 State Street, Atlanta, GA 30332-0430.

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Issue

Vol. 93, Iss. 8 — 20 August 2004

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