Infrared Absorption and Oxygen Content in Silicon and Germanium

W. Kaiser, P. H. Keck, and C. F. Lange
Phys. Rev. 101, 1264 – Published 15 February 1956
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Abstract

An optical absorption band at 9μ has been correlated with the oxygen content in silicon. Pulled silicon crystals were found to contain up to 1018 oxygen atoms per cm3 which seem to originate from the quartz crucible. The oxygen concentration in silicon crystals prepared by the floating zone technique in vacuum was found to be less than 1016 oxygen atoms per cm3. The 9μ absorption due to silicon-oxygen bond stretching vibrations provides a possibility for a quantitative oxygen analysis of high sensitivity. A corresponding absorption in germanium at 11.6μ is believed to be due to a germanium-oxygen vibration.

  • Received 12 October 1955

DOI:https://doi.org/10.1103/PhysRev.101.1264

©1956 American Physical Society

Authors & Affiliations

W. Kaiser, P. H. Keck, and C. F. Lange

  • Signal Corps Engineering Laboratories, Fort Monmouth, New Jersey

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Issue

Vol. 101, Iss. 4 — February 1956

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