Application of the Orthogonalized Plane-Wave Method to Silicon Crystal

Truman O. Woodruff
Phys. Rev. 103, 1159 – Published 1 September 1956
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Abstract

Approximate solutions for k=0 of the Hartree-Fock-Slater equations for a perfect silicon crystal have been obtained by the orthogonalized plane-wave method. Estimates of the energy eigenvalues of the valence and conduction states for k=0 are given. A simple method for obtaining a first approximation to the crystal potential and its Fourier coefficients was used. Approximate analytic wave functions and corresponding energy eigenvalues for the 1s, 2s, and 2p states in the isolated silicon atom were determined by a variational technique.

  • Received 28 March 1956

DOI:https://doi.org/10.1103/PhysRev.103.1159

©1956 American Physical Society

Authors & Affiliations

Truman O. Woodruff*

  • Department of Physics, University of Illinois, Urbana, Illinois

  • *Present address: General Electric Research Laboratory, Schenectady, New York.

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Issue

Vol. 103, Iss. 5 — September 1956

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