Abstract
The ionization rates for holes and electrons in silicon at high electric fields have been evaluated from data on the multiplication of reverse-biased junctions. In Si, electrons have a higher ionization rate than holes. The variation of ionization rate with field strength is in good agreement with theory.
- Received 12 October 1956
DOI:https://doi.org/10.1103/PhysRev.105.1246
©1957 American Physical Society