Electrical and Thermal Properties of Bi2 Te3

C. B. Satterthwaite and R. W. Ure, Jr.
Phys. Rev. 108, 1164 – Published 1 December 1957
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Abstract

Samples of both n-type and p-type Bi2Te3 containing from 3×1017 to 5×1019 extrinsic carriers were prepared and the phase diagram in the region about Bi2Te3 has been clarified. The Hall mobility parallel to the cleavage planes varies as T1.5 for holes and T2.7 for electrons. Room temperature values are μp=420 cm2 v1 sec1 and μn=270 cm2 v1 sec1. The energy gap is Eg=0.20 electron volts. From thermal conductivity measurements over the temperature range from 77°K to 380°K the lattice conductivity was found to be κL=5.10×102T watt-deg1 cm1. The sharp rise in the thermal conductivity in the vicinity of room temperature was attributed to transport of energy by ambipolar diffusion of electrons and holes.

  • Received 15 August 1957

DOI:https://doi.org/10.1103/PhysRev.108.1164

©1957 American Physical Society

Authors & Affiliations

C. B. Satterthwaite and R. W. Ure, Jr.

  • Westinghouse Research Laboratories, Pittsburgh, Pennsylvania

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Issue

Vol. 108, Iss. 5 — December 1957

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