Abstract
Measurements of the three weak-field magnetoresistance coefficients and the Hall mobility have been made at a number of different temperatures between 77°K and 350°K on -type silicon samples ranging in resistivity from 0.15 to 115 ohm-cm. The results indicate a marked temperature dependence of the anisotropies of the energy band structure and/or the scattering. The weak-field magnetoresistance coefficients happen to satisfy nearly the same symmetry relations above about 275°K as those satisfied by -type germanium.
- Received 3 September 1957
DOI:https://doi.org/10.1103/PhysRev.109.1098
©1958 American Physical Society