Optical Properties of Mg2Si, Mg2Ge, and Mg2Sn from 0.6 to 11.0 eV at 77°K

W. J. SCOULER
Phys. Rev. 178, 1353 – Published 15 February 1969
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Abstract

Reflectance measurements of the semiconducting compounds Mg2Si, Mg2Ge, and Mg2Sn from 0.6 to 11.0 eV at 77°K are analyzed by the Kramers-Kronig relations to yield the optical and dielectric constants. These materials crystallize in the antifluorite structure yet their optical properties are similar to those of zinc-blende semiconductors. A short discussion is included concerning the dependence of the dielectric constant upon the accuracy of the reflectance measurements and upon the choice of the arbitrary high-energy reflectance function.

  • Received 21 August 1968

DOI:https://doi.org/10.1103/PhysRev.178.1353

©1969 American Physical Society

Authors & Affiliations

W. J. SCOULER

  • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173

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Vol. 178, Iss. 3 — February 1969

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