Stark Effect on Impurity Levels in Diamond

E. Anastassakis
Phys. Rev. 186, 760 – Published 15 October 1969
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Abstract

In this article we present our experimental results on the Stark effect of the shallow impurity levels of p-type semiconducting diamond (IIb). The shift of the levels is found to be quadratic in the applied electric field, and to tend towards the ground state. No splitting of the fourfold degenerate levels was observed; instead, a broadening of the levels, quadratic in the field, is attributed to an unresolved splitting. The over-all behavior of the spectrum agrees with the group-theoretical predictions, and the estimated Stark coefficients are in reasonable relation with those of silicon and germanium.

  • Received 28 April 1969

DOI:https://doi.org/10.1103/PhysRev.186.760

©1969 American Physical Society

Authors & Affiliations

E. Anastassakis*

  • Physics Department and Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania, 19104

  • *Present address: Physics Department, Northeastern University, Boston, Mass. 02115.

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Issue

Vol. 186, Iss. 3 — October 1969

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