Electrical Properties of Silicon Containing Arsenic and Boron

F. J. Morin and J. P. Maita
Phys. Rev. 96, 28 – Published 1 October 1954
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Abstract

Electrical conductivity and Hall effect have been measured from 10° to 1100° Kelvin on single-crystal silicon containing arsenic and boron. Extrinsic carrier concentration is computed from Hall coefficient. Analysis of extrinsic carrier concentration indicates the ionization energy of arsenic donor levels to be 0.049 ev and of boron acceptor levels to be 0.045 ev for low impurity concentrations. Fermi degeneracy is found to occur in the range 1018 to 1019 cm3 impurity concentration. Extrinsic Hall mobility is computed from Hall coefficient and conductivity. Curves of Hall mobility against resistivity at 300°K are computed from theory and compared with experiment. The temperature dependence of lattice-scattering mobility is found from conductivity to be T2.6 for electrons and T2.3 for holes. From conductivity mobility and intrinsic conductivity, it is found that carrier concentration at any temperature below 700°K is given by the expression: np=1.5×1033T3exp(1.21kT). The temperature dependence of the ratio Hall mobility/conductivity mobility is determined for holes and electrons.

  • Received 28 April 1954

DOI:https://doi.org/10.1103/PhysRev.96.28

©1954 American Physical Society

Authors & Affiliations

F. J. Morin and J. P. Maita

  • Bell Telephone Laboratories, Murray Hill, New Jersey

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Issue

Vol. 96, Iss. 1 — October 1954

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