The drift velocity in high electric fields is calculated for several wide-band-gap semiconductors. Saturated velocities above ${10}^7$ cm/sec are found for several and SiC, diamond, and GaN hold promise for values above 2×${10}^7$ cm/sec.

• Received 17 December 1974

DOI:https://doi.org/10.1103/PhysRevB.12.2361