Valence bands of the Mg2X(X=Si, Ge, Sn) semiconducting compounds

Javier Tejeda and Manuel Cardona
Phys. Rev. B 14, 2559 – Published 15 September 1976
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Abstract

Energy distribution spectra of photoelectrons excited by monochromatized Al Kα radiation (XPS) from the valence bands of the Mg2X semiconductors are presented. The results are compared with calculated densities of valence states obtained from parametrized tight-binding bands. The nearest-neighbor interaction parameters are determined so as to obtain theoretical total densities of valence states which fit the experimental XPS spectra and partial densities of states which agree with soft-x-ray emission data. The upper, p-like valence bands so determined agree well with the empirical pseudopotential calculations of Au-Yang and Cohen while discrepancies appear for the lower s bands. The parameters of the tight-binding model are compared with those reported recently by several authors for the elemental semiconductors.

  • Received 23 February 1976

DOI:https://doi.org/10.1103/PhysRevB.14.2559

©1976 American Physical Society

Authors & Affiliations

Javier Tejeda and Manuel Cardona

  • Max-Planck-Institut für Festkörperforschung, Stuttgart, Federal Republic of Germany

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Issue

Vol. 14, Iss. 6 — 15 September 1976

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