Anisotropy of defect creation in electron-irradiated iron crystals

F. Maury, M. Biget, P. Vajda, A. Lucasson, and P. Lucasson
Phys. Rev. B 14, 5303 – Published 15 December 1976
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Abstract

Single crystals of α-iron were irradiated perpendicularly to the (100), (110), and (111) planes with electrons in the range 0.35-1.7 MeV and their electrical resistivity change rates were measured. A geometrical model of the threshold-energy surface for atomic displacement in a bcc lattice produces a fit to the experimental data leading to the following values for the threshold energies in the principal crystal directions: Td100=17±1 eV, Td111=20±1.5 eV, and Td11030 eV. The specific resistivity of a Frenkel pair is deduced to ρFFe=(30±5) μΩcm/at.%. From the obtained Td's we derived an interatomic potential of the Born-Mayer type, valid in the range 1.2r2.5 Å. We propose as a good choice: V(r)=8900e4.5r eV. The recovery due to isochronal annealing during stage I, after irradiation at different electron energies, was measured and related to specific recovery mechanisms. Thus, the first important substage, IB (∼ 66 K), is due to the recovery of close Frenkel pairs created in the 100 direction, while a comparison of calculated cross sections suggests that IC (∼ 87 K) possibly stems from 111 close pairs. Substage ID (90-110 K) is complex; its first part, below 100 K, originates mostly from defects produced in the 100 direction and the second part, above 100 K, together with IE, principally originates from defects produced in the 111 direction.

  • Received 8 July 1976

DOI:https://doi.org/10.1103/PhysRevB.14.5303

©1976 American Physical Society

Authors & Affiliations

F. Maury, M. Biget, P. Vajda, A. Lucasson*, and P. Lucasson

  • Equipe de Recherches du Centre National de la Recherche Scientifique, Laboratoire de Chimie Physique, Bâtiment 350, F-91405 Orsay, France

  • *Laboratoire de Physique de l'Ecole Normale Supérieure de Jeunes Filles, F-92120 Montrouge, France.

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Vol. 14, Iss. 12 — 15 December 1976

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