Self-consistent electronic structures of magnetic semiconductors by a discrete variational Xα calculation. I. Ferromagnetic spinels, CdCr2S4 and CdCr2Se4

Tamio Oguchi, Takeshi Kambara, and Ken Ichiro Gondaira
Phys. Rev. B 22, 872 – Published 15 July 1980
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Abstract

The electronic band structures of ferromagnetic CdCr2S4 and CdCr2Se4 are self-consistently calculated by using the discrete variational Xα method. The general features of the band structures are quite similar between sulfide and selenide; each structure consists of relatively narrow valence bands, fairly wide conduction bands, and very narrow d bands. The 3dε and 3dγ bands for up spin lie in the energy region near the top of the valence bands and around the bottom of the lowest conduction band, respectively, and both d bands for down spin fall in the conduction bands. The maximum point of the valence bands has Σ4 symmetry for both compounds, and the minimum point of the conduction band has Λ1 for sulfide and Γ1 for selenide. The fundamental energy gap at the Γ point is 2.6 eV for sulfide and 2.3 eV for selenide. The spin polarization of the 3d orbitals of Cr is about 3.5, in which 0.5 comes from the 3dγ components mixed with the valence bands, while the spin polarization of the outermost p orbitals of chalcogen ion has the opposite sign, the magnitude of which is about 0.3.

  • Received 29 January 1980

DOI:https://doi.org/10.1103/PhysRevB.22.872

©1980 American Physical Society

Authors & Affiliations

Tamio Oguchi, Takeshi Kambara, and Ken Ichiro Gondaira

  • Department of Engineering Physics, The University of Electro-Communications, Chofu, Tokyo 182, Japan

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Issue

Vol. 22, Iss. 2 — 15 July 1980

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