Self-consistent electronic structures of magnetic semiconductors by a discrete variational Xα calculation. II. HgCr2Se4

Tamio Oguchi, Takeshi Kambara, and Ken Ichiro Gondaira
Phys. Rev. B 24, 3441 – Published 15 September 1981
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Abstract

The electronic band structure of a ferromagnetic semiconducting spinel HgCr2Se4 is self-consistently calculated by using the discrete variational Xα method. The overall features of the band structure are quite similar to those of CdCr2S4 and CdCr2Se4 which have been calculated in the first paper of this series [T. Oguchi, T. Kambara, and K.I. Gondaira, Phys. Rev. B 22, 872 (1980)]. The fundamental energy gap is 1.8 eV, somewhat narrower than those of the Cd compounds. The narrowest band gap appears between the dε and dγ bands, and its width is 0.4 eV, much smaller than those of the Cd compounds. The top of the valence bands has the Σ4 symmetry and the bottom of the conduction bands Γ1. The spin polarization of the 3d orbitals of Cr is about 3.5, of which 0.5 comes from the 3d components mixed in the valence bands, while the spin polarization of the 4p orbitals of Se has the opposite sign, the magnitude of which is about 0.3.

  • Received 9 December 1980

DOI:https://doi.org/10.1103/PhysRevB.24.3441

©1981 American Physical Society

Authors & Affiliations

Tamio Oguchi*, Takeshi Kambara, and Ken Ichiro Gondaira

  • Department of Engineering Physics, The University of Electro-Communications, Chofu, Tokyo 182, Japan

  • *Present address: Institute for Solid State Physics, University of Tokyo, Roppongi, Minato-ku, Tokyo 106, Japan.

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Issue

Vol. 24, Iss. 6 — 15 September 1981

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