Magnetoresistance measurements between 1 and 80 K have been made on thin Cu films having thicknesses between 30 and 140 Å. These measurements were made in order to examine the high-temperature limit of localization; indeed, the magnetoresistance remained negative even at 80 K, confirming that localization effects exist. From the dependence of the magnetoresistance on temperature and on magnetic field, values of the inelastic scattering time ${\tau }_i$, the spin-orbit scattering time ${\tau }_{\mathrm{so}}$, and the scattering time from magnetic impurties ${\tau }_s$ were obtained. The spin-orbit scattering became stronger in the thinner films producing an observable positive magnetoresistance in parallel magnetic fields.

• Received 17 September 1982

DOI:https://doi.org/10.1103/PhysRevB.27.1413