Modulation-spectroscopy study of the Ga1xAlxSb band structure

C. Alibert, A. Joullié, A. M. Joullié, and C. Ance
Phys. Rev. B 27, 4946 – Published 15 April 1983
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Abstract

We report a detailed study of the Ga1xAlxSb band structure over the entire composition range. We have determined the energies, as a function of temperature, at which the direct transitions Γ8vΓ6c(E0), Γ7vΓ6c(E0+Δ0), L4,5vL6c(E1), and L6vL6c(E1+Δ1) occur, and those at which the indirect transitions Γ8vX6c(EX) and Γ8vL6c(EL) occur. A simple physical model is proposed to explain the experimental values of the E0, Δ0, E1, Δ1 bowing parameters. A detailed comparison is made between our results and previously reported ones.

  • Received 1 December 1982

DOI:https://doi.org/10.1103/PhysRevB.27.4946

©1983 American Physical Society

Authors & Affiliations

C. Alibert, A. Joullié, and A. M. Joullié

  • Equipe de Microoptoélectronique de Montpellier, Université des Sciences et Techniques du Languedoc, F-34060 Montpellier Cedex, France

C. Ance

  • Laboratoire de Spectroscopie II, Équipe associé au Centre National de la Recherche Scientifique, Université des Sciences et Techniques du Languedoc, F-34060 Montpellier Cedex, France

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Vol. 27, Iss. 8 — 15 April 1983

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