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Theory of semiconductor heterojunctions: The role of quantum dipoles

J. Tersoff
Phys. Rev. B 30, 4874(R) – Published 15 October 1984
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Abstract

At any semiconductor heterojunction there is an interface dipole associated with quantum-mechanical tunneling, which depends on the band "lineup" between the two semiconductors. When the interface dipolar response dominates, the actual band discontinuity must be close to that unique value which would give a zero interface dipole. A simple criterion is proposed for this zero-dipole lineup, which gives excellent agreement with experimental band lineups. The close connection between heterojunction band lineups and Schottky barrier formation is emphasized.

  • Received 30 May 1984

DOI:https://doi.org/10.1103/PhysRevB.30.4874

©1984 American Physical Society

Authors & Affiliations

J. Tersoff*

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

  • *Present address: IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598

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Vol. 30, Iss. 8 — 15 October 1984

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