Local atomic and electronic arrangements in WxV1xO2

C. Tang, P. Georgopoulos, M. E. Fine, J. B. Cohen, M. Nygren, G. S. Knapp, and A. Aldred
Phys. Rev. B 31, 1000 – Published 15 January 1985
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Abstract

Low-temperature magnetic susceptibilities yield an effective magnetic moment per W atom of (3.24±0.10)μB for both W0.05V0.95O2 and W0.08V0.92O2. This value suggests a transfer of two d-shell electrons from the W to neighboring V ions to form V3+-W6+ and V3+-V4+ pairs along the a axis of the monoclinic low-temperature phase. Studies of the extended x-ray-absorption fine-structure pattern for various compositions of different W-cation fraction x, and of the area of the W LIII-edge resonance as well, confirm that the valence of W is 6+. Also, examination of the position of the V K edge versus composition for these alloys and other compounds indicates that the concentration of V3+ ions increases with W-cation fraction x. Thus, upon alloying VO2 with W, the reduction in the temperature of the metal-semiconductor transition by W appears to be due to charge transfer. From x-ray small-angle scattering it was found that there are no W-atom clusters present. The high-field magnetization at low temperature suggests that alloying causes this oxide to become a spin glass.

  • Received 27 August 1984

DOI:https://doi.org/10.1103/PhysRevB.31.1000

©1985 American Physical Society

Authors & Affiliations

C. Tang, P. Georgopoulos, M. E. Fine, and J. B. Cohen

  • Department of Materials Science and Engineering, The Technological Institute, Northwestern University, Evanston, Illinois 60201

M. Nygren

  • Department of Inorganic Chemistry, Arrhenius Laboratory, University of Sweden, 10691 Stockholm, Sweden

G. S. Knapp and A. Aldred

  • Materials Science and Technology Division, Argonne National Laboratory, Argonne, Illinois 60439

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Vol. 31, Iss. 2 — 15 January 1985

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