By investigating local potential changes at the Si(111)/Al interface, we find restrictions on the use of ‘‘canonical’’ Schottky-barrier heights. It is demonstrated that the ‘‘metallic’’ behavior of the metal-induced gap states is insufficient to completely screen out strong local interface potential effects on Schottky-barrier heights.

• Received 24 April 1985

DOI:https://doi.org/10.1103/PhysRevB.32.3955