Raman spectroscopy has been used to study structural disorder in silicon implanted with phosphorus and boron ions. Line-shape asymmetry of the one-phonon mode and the oscillator strength of the two-phonon combination spectra are used to characterize the disorder. This analysis permits a rough identification of the threshold for formation of microcrystallites embedded in an amorphous continuum.

• Received 8 January 1985

DOI:https://doi.org/10.1103/PhysRevB.32.6688