Abstract
The effect of external stress on the lattice location of H in α- was investigated at room temperature by the channeling method using the reaction B, α)αα. A drastic site change of H from T sites to the displaced-T or 4T configuration was observed when a compressive stress of 7 kg/ (below the elastic limit) was applied along the 〈100〉 direction. With the release of the stress, the H atoms returned to the T sites. The observed stress-induced configuration is believed to be closely connected to the occurrence of an enormous enhancement of diffusivity of H in V under stress.
- Received 7 October 1985
DOI:https://doi.org/10.1103/PhysRevB.33.5121
©1986 American Physical Society