Nonequilibrium theory of the optical Stark effect and spectral hole burning in semiconductors

S. Schmitt-Rink, D. S. Chemla, and H. Haug
Phys. Rev. B 37, 941 – Published 15 January 1988
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Abstract

We consider the influence of intense coherent laser fields on the electronic and optical properties of semiconductors. Using nonequilibrium Green’s-function techniques and exploiting the analogies to superconducting and Bose-condensed systems, we discuss the nature of the renormalizations and the collective excitations in the collisionless regime. Experimentally, this situation can be realized (i) under nonresonant excitation of virtual electron-hole pairs and (ii) under resonant excitation with ultrashort pulses. We explain the recently observed optical Stark effect as well as spectral hole burning and derive from first principles the longitudinal and transverse dielectric functions including exciton correlations.

  • Received 14 July 1987

DOI:https://doi.org/10.1103/PhysRevB.37.941

©1988 American Physical Society

Authors & Affiliations

S. Schmitt-Rink

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974-2070

D. S. Chemla

  • AT&T Bell Laboratories, Holmdel, New Jersey 07733

H. Haug

  • Institut für Theoretische Physik, Universität Frankfurt, Robert-Mayer-Strasse 8, D-6000 Frankfurt am Main, Federal Republic of Germany

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Vol. 37, Iss. 2 — 15 January 1988

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