Size-selected ${\mathrm{Si}}_{10}$ clusters have been deposited on a clean Au(001)-(5×20) surface and imaged using a scanning tunneling microscope in ultrahigh vaccum. The cluster images were found to depend on the sample bias voltage, and from tunneling spectroscopy measurements the clusters were found to have a band gap of ∼1.0 eV wide. A wide variety of cluster images were observed even though size-selected clusters were deposited. When Si atoms were deposited on the surface flat islands were formed.

• Received 17 February 1989

DOI:https://doi.org/10.1103/PhysRevB.39.11168