Hopping Conductivity in Disordered Systems

Vinay Ambegaokar, B. I. Halperin, and J. S. Langer
Phys. Rev. B 4, 2612 – Published 15 October 1971
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Abstract

By considering a model in which charge is transported via phonon-induced tunneling of electrons between localized states which are randomly distributed in energy and position, Mott has obtained an electrical conductivity of the form σexp[(λα3ρ0kT)14]. Here T is the temperature of the system, ρ0 is the density of states at the Fermi level, λ is a dimensionless constant, and α1 is the distance for exponential decay of the wave functions. We rederive these results, relating λ to the critical density of a certain dimensionless percolation problem, and we estimate λ to be approximately 16. The applicability of the model to experimental observations on amorphous Ge, Si, and C is discussed.

  • Received 14 May 1971

DOI:https://doi.org/10.1103/PhysRevB.4.2612

©1971 American Physical Society

Authors & Affiliations

Vinay Ambegaokar*

  • Research Institute for Theoretical Physics, University of Helsinki, Finland

B. I. Halperin

  • Bell Telephone Laboratories, Murray Hill, New Jersey 07974

J. S. Langer

  • Carnegie-Mellon University, Pittsburgh, Pennsylvania 15213

  • *Permanent address: Cornell University, Ithaca, N. Y.
  • Supported in part by the National Science Foundation.

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Vol. 4, Iss. 8 — 15 October 1971

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