Valence-Band Parameters in Cubic Semiconductors

P. Lawaetz
Phys. Rev. B 4, 3460 – Published 15 November 1971
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Abstract

A five-level k·p analysis is used to compute the principal effective-mass parameters at k=0 in diamond- and zinc-blende-type semiconductors. A semiempirical model is developed to describe the dependence of the momentum matrix elements on lattice constant, ionicity, and d-electron shells in the cores. Satisfactory agreement with available experimental data is achieved with six fitted parameters.

  • Received 15 July 1971

DOI:https://doi.org/10.1103/PhysRevB.4.3460

©1971 American Physical Society

Authors & Affiliations

P. Lawaetz*

  • Bell Telephone Laboratories, Murray Hill, New Jersey 07974

  • *Present address: Physics Laboratory III, Technical University of Denmark, Lyngby, Denmark.

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Vol. 4, Iss. 10 — 15 November 1971

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