Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy

D. K. Biegelsen, R. D. Bringans, J. E. Northrup, and L.-E. Swartz
Phys. Rev. B 41, 5701 – Published 15 March 1990; Erratum Phys. Rev. B 42, 3195 (1990)
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Abstract

We present atomic-resolution images, obtained with scanning tunneling microscopy (STM), of the various reconstructions of smooth, in situ grown GaAs(100) surfaces. The outermost layer of the c(4×4) reconstruction consists of three As-As adatom dimers parallel to [011]. Cells containing two or three As-As dimers have been observed on the 2×4 surface. The ‘‘1×6’’ surface seen in low-energy electron diffraction has a 2×6 unit cell containing two As-As dimers. Diffraction patterns implying 4×6 symmetry are seen to arise from the coexistence of 2×6 and 4×2 units. The c(8×2) surface is made up of two Ga-Ga dimers and two missing dimers per 4×2 cell. Atomic models, which are consistent with both the STM images and electron-counting heuristics, are also shown.

  • Received 5 January 1990

DOI:https://doi.org/10.1103/PhysRevB.41.5701

©1990 American Physical Society

Erratum

Erratum: Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy

D. K. Biegelsen, R. D. Bringans, J. E. Northrup, and L. -E. Swartz
Phys. Rev. B 42, 3195 (1990)

Authors & Affiliations

D. K. Biegelsen, R. D. Bringans, J. E. Northrup, and L.-E. Swartz

  • Xerox Corporation, Palo Alto Research Center, Palo Alto, California 94304

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Issue

Vol. 41, Iss. 9 — 15 March 1990

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