Abstract
The temperature dependence of positron motion in silicon (Si:[P]=4× ) is studied experimentally by measuring the drift length of positrons in the space-charge region of an Au-Si surface-barrier diode. At 300 K the positron mobility is 110±15 , and it increases to 2800±1000 at 30 K. Below 300 K the mobility varies with temperature in accordance with . This temperature dependence of carrier mobility is typical of scattering from longitudinal-acoustic phonons.
- Received 14 December 1990
DOI:https://doi.org/10.1103/PhysRevB.43.12114
©1991 American Physical Society