Modeling the optical dielectric function of the alloy system AlxGa1xAs

Charles C. Kim, J. W. Garland, and P. M. Raccah
Phys. Rev. B 47, 1876 – Published 15 January 1993
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Abstract

In a previous paper, the authors proposed a model for the optical dielectric function of zinc-blende semiconductors. It was found to be more generally valid than previous models. In this paper, it is used to obtain an analytic expression for the dielectric function of the alloy series AlxGa1xAs as a function of ω and x, which is compared with spectroscopic ellipsometry data between 1.5 and 6.0 eV. The model enables us to determine accurately the critical point energies and linewidths of AlxGa1xAs as a function of x. Also, it leads us to model the optical dielectric function of these alloys better than any previous model in that (1) it covers the entire photon energy range between 1.5 and 6.0 eV as well as the entire alloy composition range between 0.0 and 1.0, (2) it calculates the optical properties of AlxGa1xAs as a function of ω and x with the highest accuracy, and (3) it allows one to accurately calculate the values of the refractive indices below 1.5 eV as a function of ω and x.

  • Received 27 August 1992

DOI:https://doi.org/10.1103/PhysRevB.47.1876

©1993 American Physical Society

Authors & Affiliations

Charles C. Kim, J. W. Garland, and P. M. Raccah

  • Department of Physics, University of Illinois at Chicago, PO Box 4348, Chicago, Illinois 60680

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Issue

Vol. 47, Iss. 4 — 15 January 1993

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