Magnetoresistance of SmMn2Ge2: A layered antiferromagnet

R. B. van Dover, E. M. Gyorgy, R. J. Cava, J. J. Krajewski, R. J. Felder, and W. F. Peck
Phys. Rev. B 47, 6134 – Published 1 March 1993
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Abstract

The behavior of the magnetoresistance in SmMn2Ge2–a layered intermetallic compound–is analogous to the giant magnetoresistance recently reported for artificial metallic multilayers. A moderate magnetic field (2–15 kOe) is sufficient to switch SmMn2Ge2 from the antiferromagnetic (metamagnetic) state to saturation, at a temperature of ∼100 K, and this results in a resistance change of 4–8 %. The study of spin-dependent scattering in this and similar layered structures, in which nature has conspired to make essentially perfect interfaces, serves as a complement to the study of the artificial structures.

  • Received 21 October 1992

DOI:https://doi.org/10.1103/PhysRevB.47.6134

©1993 American Physical Society

Authors & Affiliations

R. B. van Dover, E. M. Gyorgy, R. J. Cava, J. J. Krajewski, R. J. Felder, and W. F. Peck

  • AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974

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Vol. 47, Iss. 10 — 1 March 1993

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