Conduction anisotropy in layered semiconductors

L. K. Gallos, A. N. Anagnostopoulos, and P. Argyrakis
Phys. Rev. B 50, 14643 – Published 15 November 1994
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Abstract

We present a simple theoretical model for the diffusion of free carriers in layered semiconducting compounds, for which a small concentration of dopants (guest layers) disturb the system conductance, resulting in a strong anisotropy across and along the layers, which depends on the temperature of the system, as well as on the barrier lowering caused by the applied voltage. This model is based on diffusion via random walks of free particles, with the guest layers acting as barriers hindering free motion. By considering the probability of overcoming the barriers, we derive a formula for the current in terms of the guest concentration, barrier height, and temperature. Experimental results from previous studies for the system ZnIn2S4:Zn2In2S5 concerning the anisotropic conductivity, its temperature and voltage dependence, as well as computer simulations are in excellent agreement with this model.

  • Received 9 June 1994

DOI:https://doi.org/10.1103/PhysRevB.50.14643

©1994 American Physical Society

Authors & Affiliations

L. K. Gallos, A. N. Anagnostopoulos, and P. Argyrakis

  • Department of Physics, University of Thessaloniki, 54006 Thessaloniki, Greece

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Issue

Vol. 50, Iss. 19 — 15 November 1994

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