Strong Mn-Mn distance dependence of the Mn interlayer coupling in SmMn2Ge2-related compounds and its role in magnetic phase transitions

J. H. V. J. Brabers, A. J. Nolten, F. Kayzel, S. H. J. Lenczowski, K. H. J. Buschow, and F. R. de Boer
Phys. Rev. B 50, 16410 – Published 1 December 1994
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Abstract

The interplay between the Mn interlayer coupling constant nMnMn and the thermal expansion has been investigated by means of thermal-expansion, specific-heat, and magnetization measurements. A linear relation between nMnMn and the thermal expansion was established. This linear relation is used in the formulation of a quantitative model for temperature-induced metamagnetic transitions in RMn2Ge2 compounds. The observed relation between the unit-cell dimensions and the transition temperatures is interpreted in terms of this model. For polycrystalline Sm0.9Y0.1Mn2Ge2, the relation between the metamagnetic transitions and anomalies in the electrical resistivity was investigated. A magnetic-field-induced change of the resistance of 10% was observed at 185 K. It appears likely that magnetovolume effects are responsible for the anomalous resistance behavior.

  • Received 14 June 1994

DOI:https://doi.org/10.1103/PhysRevB.50.16410

©1994 American Physical Society

Authors & Affiliations

J. H. V. J. Brabers

  • Van der Waals-Zeeman Laboratory, University of Amsterdam, 1018 XE Amsterdam, The Netherlands
  • Philips Research Laboratories, P.O. Box 80 000, 5600 JA Eindhoven, The Netherlands

A. J. Nolten and F. Kayzel

  • Van der Waals-Zeeman Laboratory, University of Amsterdam, 1018 XE Amsterdam, The Netherlands

S. H. J. Lenczowski

  • Philips Research Laboratories, P.O. Box 80 000, 5600 JA Eindhoven, The Netherlands

K. H. J. Buschow

  • Van der Waals-Zeeman Laboratory, University of Amsterdam, 1018 XE Amsterdam, The Netherlands
  • Philips Research Laboratories, P.O. Box 80 000, 5600 JA Eindhoven, The Netherlands

F. R. de Boer

  • Van der Waals-Zeeman Laboratory, University of Amsterdam, 1018 XE Amsterdam, The Netherlands

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Vol. 50, Iss. 22 — 1 December 1994

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