Pressure effects on the magnetoresistance in doped manganese perovskites

H. Y. Hwang, T. T. M. Palstra, S- W. Cheong, and B. Batlogg
Phys. Rev. B 52, 15046 – Published 1 December 1995
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Abstract

We present a detailed study on the effects of applied hydrostatic pressure on the magnetoresistance in doped LaMnO3 at fixed doping level. In all cases, the application of external pressure monotonically increases the Curie temperature. This is compared with the application of "internal" pressure, which is varied by substituting different rare-earth ions for La. Both effects can be understood in one simple picture that relates the structural modifications to the variation of the Mn-Mn electronic transfer integral. Thus a general phase diagram has been derived with the transfer integral as the implicit microscopic parameter dominating the magnetic and transport properties of doped LaMnO3.

  • Received 12 July 1995

DOI:https://doi.org/10.1103/PhysRevB.52.15046

©1995 American Physical Society

Authors & Affiliations

H. Y. Hwang

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974 and Joseph Henry Laboratories of Physics, Princeton University, Princeton, New Jersey 08544

T. T. M. Palstra, S- W. Cheong, and B. Batlogg

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

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Vol. 52, Iss. 21 — 1 December 1995

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