Structure and properties of silicon XII: A complex tetrahedrally bonded phase

R. O. Piltz, J. R. Maclean, S. J. Clark, G. J. Ackland, P. D. Hatton, and J. Crain
Phys. Rev. B 52, 4072 – Published 1 August 1995
PDFExport Citation

Abstract

Angle-dispersive powder diffraction using an image-plate area detector and synchrotron radiation have been used in conjuction with first-principles pseudopotential calculations to examine the structural, electronic, and vibrational properties of the recently discovered phase XII of silicon (the R8 phase). The R8 phase is synthesized by decompression of the high-pressure β-Sn phase and exists over a relatively wide pressure range of 2–12 GPa. Although there are structural similarities between BC8 and R8, the latter phase exhibits substantially greater local deviations from ideal tetrahedral bonding and is the most distorted crystalline structure containing fourfold-coordinated silicon. We present a detailed investigation of the pressure response of the BC8 structure, suggest plausible atomic trajectories for the β-Sn to R8 transition, and we investigate the energy of R8 silicon relative to those of other tetrhedral forms.

  • Received 23 March 1995

DOI:https://doi.org/10.1103/PhysRevB.52.4072

©1995 American Physical Society

Authors & Affiliations

R. O. Piltz, J. R. Maclean, S. J. Clark, G. J. Ackland, P. D. Hatton, and J. Crain

  • Department of Physics and Astronomy, The University of Edinburgh, Mayfield Road, Edinburgh EH9 3JZ, United Kingdom

References (Subscription Required)

Click to Expand
Issue

Vol. 52, Iss. 6 — 1 August 1995

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×