Absorption edge, band tails, and disorder of amorphous semiconductors

A. R. Zanatta and I. Chambouleyron
Phys. Rev. B 53, 3833 – Published 15 February 1996
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Abstract

In this work the relationship between the characteristic energy of the Urbach edge E0 and the parameter B12 of the Tauc's representation of the absorption coefficient of a-SiN- and a-GeN-based alloys is presented and discussed. No correspondence has been experimentally found between B12 and the topological disorder induced by small impurity concentrations in the network (less than a few at.%), which provokes a broadening of the Urbach tail. In the alloy regime, nevertheless, E0 and B12 present a linear correspondence. This fact is discussed in terms of the structural changes induced by atoms of different atomic coordination, i.e., on the base of the dominant bonding character (which changes from purely covalent to partially ionic) and the electronic states at the top of the valence band, as the nitrogen content is increased. The effects of hydrogen, carbon, and silicon in the a-Si and a-Ge networks are also discussed in terms of the Tauc slope B12 parameter.

  • Received 6 July 1995

DOI:https://doi.org/10.1103/PhysRevB.53.3833

©1996 American Physical Society

Authors & Affiliations

A. R. Zanatta and I. Chambouleyron

  • Instituto de Física "Gleb Wataghin," Universidade Estadual de Campinas, UNICAMP, 13083-970, Campinas, São Paulo, Brazil

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Vol. 53, Iss. 7 — 15 February 1996

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