We derive the effective-mass Hamiltonian for wurtzite semiconductors, including the strain effects. This Hamiltonian provides a theoretical groundwork for calculating the electronic band structures and optical constants of bulk and quantum-well wurtzite semiconductors. We apply Kane’s model to derive the band-edge energies and the optical momentum-matrix elements for strained wurtzite semiconductors. We then use the k⋅p perturbation method to derive the effective-mass Hamiltonian, which is then checked with that derived using an invariant method based on the Pikus-Bir model. We obtain the band structure ${\mathit{A}}_{\mathit{i}}$ parameters in the group theoretical model explicitly in terms of the momentum-matrix elements. We also find the proper definitions of the important physical quantities used in both models and present analytical expressions for the valence-band dispersions, the effective masses, and the interband optical-transition momentum-matrix elements near the band edges, taking into account the strain effects. © 1996 The American Physical Society.

• Received 24 January 1996

DOI:https://doi.org/10.1103/PhysRevB.54.2491