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Electronic properties of carbon nanotubes with polygonized cross sections

J. -C. Charlier, Ph. Lambin, and T. W. Ebbesen
Phys. Rev. B 54, R8377(R) – Published 15 September 1996
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Abstract

The electronic properties of carbon nanotubes having polygonized cross sections instead of purely circular ones, such as recently observed using transmission electron microscopy, are investigated with plane-wave ab initio pseudopotential local-density-functional calculations and simple tight-binding models. Strong σ*π* hybridization effects occur in zigzag nanotubes due to the high curvature located near the edges of the polygonal cross-section prism. These effects, combined with a lowering of symmetry, dramatically affect the electronic properties of the nanotubes. It is found that modified low-lying conduction-band states are introduced either into the bandgap of insulating nanotubes, or below the degenerate states that form the top of the valence band of metallic nanotubes, leading the corresponding nanostructures to be metals, semimetals, or at least very-small-gap semiconductors. The degree of the polygon representing the cross section of the tube, and the sharpness of the edge angles, are found to be major factors in the hybridization effect, and consequently govern the electronic behavior at the Fermi level.

  • Received 21 May 1996

DOI:https://doi.org/10.1103/PhysRevB.54.R8377

©1996 American Physical Society

Authors & Affiliations

J. -C. Charlier*

  • Unité de Physico-Chimie et de Physique des Matériaux, Université Catholique de Louvain, 1 Place Croix du Sud, B-1348 Louvain-la-Neuve, Belgium

Ph. Lambin

  • Institute for studies in Interface Sciences, Facultés Universitaires Notre-Dame de la Paix, 61 Rue de Bruxelles, B-5000 Namur, Belgium

T. W. Ebbesen

  • NEC Research Institute, 4 Independence Way, Princeton, New Jersey 08540

  • *Present address: Institut Romand de Recherche Numérique en Physique des Matériaux (IRRMA), Ecole Polytechnique Fédérale de Lausanne (EPFL), INR-Ecublens, CH-1015 Lausanne, Switzerland.

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Vol. 54, Iss. 12 — 15 September 1996

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