Core-level photoabsorption study of defects and metastable bonding configurations in boron nitride

I. Jiménez, A. F. Jankowski, L. J. Terminello, D. G. J. Sutherland, J. A. Carlisle, G. L. Doll, W. M. Tong, D. K. Shuh, and F. J. Himpsel
Phys. Rev. B 55, 12025 – Published 1 May 1997
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Abstract

A comprehensive study of different local bonding environments in boron nitride bulk and thin films has been performed by core-level photoabsorption. Several features not present in crystalline reference samples are found in the absorption spectra of the thin films. These are identified as nitrogen vacancies in the hexagonal bonding of BN, nitrogen interstitials, boron clustering, sp3-like metastable phases, and sp3 phases. Quantitative information on the concentration and distribution of point defects is easily extracted from the photoabsorption data and is discussed with regard to the formation of additional phases, the B:N ratio in the films, and compared with a random model of defect formation. Information on the stability of the bonding environments is gained by annealing the thin films. Modification of the orientation of the sp2 hexagonal planes is attained by ion bombardment and annealing, and is monitored by angle-resolved photoabsorption.

  • Received 19 December 1996

DOI:https://doi.org/10.1103/PhysRevB.55.12025

©1997 American Physical Society

Authors & Affiliations

I. Jiménez, A. F. Jankowski, L. J. Terminello, D. G. J. Sutherland, and J. A. Carlisle

  • Lawrence Livermore National Laboratory, Livermore, California 94551

G. L. Doll

  • Materials Research Department, Timken Research, Canton, Ohio 44706

W. M. Tong and D. K. Shuh

  • Lawrence Berkeley National Laboratory, Berkeley, California 94720

F. J. Himpsel

  • Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706

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Vol. 55, Iss. 18 — 1 May 1997

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