Magnetic susceptibility of semiconductors by an all-electron first-principles approach

Kaoru Ohno, Francesco Mauri, and Steven G. Louie
Phys. Rev. B 56, 1009 – Published 15 July 1997
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Abstract

The magnetic susceptibility (χ) of the semiconductors (diamond, Si, GaAs, and GaP) and of the inert-gas solids (Ne, Ar, and Kr) are evaluated within density-functional theory in the local-density approximation, using a mixed-basis all-electron approach. In Si, GaAs, GaP, Ar, and Kr, the contribution of core electrons to χ is comparable to that of valence electrons. However, our results show that the contribution associated with the core states is independent of the chemical environment and can be computed from the isolated atoms. Moreover, our results indicate that the use of a “scissor operator” does not improve the agreement of the theoretical χ with experiments.

  • Received 23 January 1997

DOI:https://doi.org/10.1103/PhysRevB.56.1009

©1997 American Physical Society

Authors & Affiliations

Kaoru Ohno

  • Department of Physics, University of California, Berkeley, California 94720
  • Institute for Materials Research, Tohoku University, Sendai 980-77, Japan

Francesco Mauri and Steven G. Louie

  • Department of Physics, University of California, Berkeley, California 94720
  • Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

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Vol. 56, Iss. 3 — 15 July 1997

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