Abstract
Reflectance and photoluminescence spectra of exciton polaritons in GaN homoepitaxial layers, grown by metalorganic chemical-vapor deposition on GaN single crystals, are reported. Polariton modes involving excitons and which correspond to split valence bands of and symmetries, are resolved. Energies of the transverse excitons are found to be, respectively: and at the temperature The shape of the measured emission spectra depends upon donor concentration. This is explained in terms of interbranch polariton scattering.
- Received 10 April 1997
DOI:https://doi.org/10.1103/PhysRevB.56.15151
©1997 American Physical Society