Magnetoresistance and magnetic properties of epitaxial magnetite thin films

G. Q. Gong, A. Gupta, Gang Xiao, W. Qian, and V. P. Dravid
Phys. Rev. B 56, 5096 – Published 1 September 1997
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Abstract

The magnetotransport and magnetic properties of epitaxial Fe3O4 thin films grown on (001)-oriented MgO substrates by pulsed-laser deposition have been investigated. The magnetoresistance (MR) exhibits a peak around the Verwey transition (Tν) as has also been reported previously for single crystals. Additionally, we have observed that the MR increases monotonically below 100 K with decreasing temperature. MR values as high as 32% have been observed for a 6600-Å-thick film at 60 K under a 4-T field. The enhanced low-temperature MR is attributed to a magnetic-field-dependent activation energy for electron hopping transport.

  • Received 27 March 1997

DOI:https://doi.org/10.1103/PhysRevB.56.5096

©1997 American Physical Society

Authors & Affiliations

G. Q. Gong

  • Department of Physics, Brown University, Providence, Rhode Island 02912

A. Gupta

  • IBM T. J. Watson Research Center, Yorktown Heights, New York 10598

Gang Xiao

  • Department of Physics, Brown University, Providence, Rhode Island 02912

W. Qian and V. P. Dravid

  • Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208

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Vol. 56, Iss. 9 — 1 September 1997

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